Ultra-fast Photodetectors for Next-Gen Communication

High-speed, high-efficiency III-V photonic devices powering optical and terahertz innovation.

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Breaking the trade-off between speed and efficiency

The future of communication hinges on performance — bandwidth, responsivity, and energy efficiency. Our photodetectors break traditional trade-offs through structural and material innovation.

Using a disruptive MUTC design, we overcome hole transport bottlenecks, achieving over 200 GHz bandwidth per lane — while maintaining a responsivity of 0.8 A/W — enabling 400 Gbit/s per channel and beyond.

Waveguide Photodetector Technology

Full-Chain Innovation in III-V Photonics

Our team deliver innovation across the full photonic device development flow, including epitaxial structure design, advanced III-V processing, ultrafast RF characterization, and broadband packaging up to 300 GHz. With years of accumulation in the design and fabrication III-V photodiodes , we have built a robust foundation for rapid product iteration and performance breakthroughs.

Advanced packaging solutions from DC to THz

We provide high-frequency packaging technologies supporting signal integrity from DC up to terahertz bands. Our solutions ensure low loss, wide bandwidth, and excellent thermal and electrical performance — enabling reliable integration of ultrafast photonic devices into real-world systems.

MUTC-PD Technology

Pioneering III-V/Si III-V/TFLN Heterogeneous Integration

We develop advanced integration techniques that combine the performance of III-V materials with the scalability of silicon photonics and the electro-optic efficiency of thin-film lithium niobate (TFLN), enabling next-generation photonic chips with unmatched speed and functionality.

Heterogeneous Integration PD

Our Products

1310/1550nm Ultra-High Speed Photodetector

1310/1550nm Ultra-High Speed PD

  • 3dB bandwidth > 220 GHz
  • Responsivity > 0.6 A/W
  • Dark current < 1 nA

Applications:

Short-reach: 200G/400G per λ
Metro/DCI: ZR, ZR+ coherent

850nm High-Speed Photodetector

850nm High-Speed PD

  • 3dB bandwidth > 40 GHz
  • Responsivity > 0.4 A/W
  • Dark current ~ 100 fA

Applications:

VCSEL-based solutions:
100Gbp per-lane and 200Gbps per-lane

UTC Photomixer Module

UTC Photomixer Module

  • F-band, G-band and J band module
  • High Responsivity
  • High THz output

Applications:

Terahertz Communication
Microwave Photonics
Non-destructive Testing

About Us

FastPhide is at the forefront of photonic innovation, developing cutting-edge photodetector solutions that power the future of optical communications.

Our team combines deep expertise in III-V semiconductors, photonic integration, and advanced packaging to deliver breakthrough performance.

About FastPhide

Partners

We collaborate extensively with leading academic institutions and industry partners to drive innovation in photonic technologies and accelerate the development of next-generation solutions.

University of Electronic Science and Technology of China University of Hong Kong City University of Hong Kong Peking University Huawei Zhejiang University Shanghai Jiao Tong University University of Electronic Science and Technology of China University of Hong Kong City University of Hong Kong Peking University Huawei Zhejiang University Shanghai Jiao Tong University

Let's Build the Future, Together

Interested in partnering, investing, or learning more about our work? We're always open to bold ideas and ambitious collaborators.

Email: contact@fastphide-lab.com

Location: Shanghai, China